Franz Pengg, LBL
Kevin Einsweiler, LBL
Roberto Marchesini, LBL
!!
We report on the first measurement results on a test-chip for the 
analog front-end of pixel readout electronics in the radiation hard 
0.8um Honeywell SOI technology (RICMOSIV-SOI). The chip has an array
of 16 by 16 cells and two additional test-rows for a more detailed
characterization of the circuit performance. Each cell comprises a 
charge sensitive preamplifier, a dual-threshold discriminator, fastOR
readout and the control-logic as interface to the binary readout
(which is not implemented in the chip). The special test-pixels allow,
besides the monitoring of various points inside the cell, the loading
of the preamplifier input with capacitances of different values, the 
investigation of cross-coupling through a 100fF interpixel capacitance
and the injection of a variable parallel current at the preamplifier
input to measure the effect of detector leakage-current on the circuit
performance.

Preliminary measurements confirm the full functionality of the chip
and indicate promising low-noise and high-speed performance. We intend
to present a detailed characterization of the front-end performance
before and after irradiation and a comparison with the results
obtained on a similar test-chip implemented in the radiation soft 
HP 0.8um technology.
!!
We report on the first measurement results on a test-chip for the 
analog front-end of pixel readout electronics in the radiation hard 
0.8um Honeywell SOI technology (RICMOSIV-SOI). The circuit is 
characterized with respect to its noise-, time-walk-, threshold-
matching and cross-coupling immunity performance and the results are
compared to those obtained on a similar circuit in the radiation-soft
HP 0.8um technology
!!