SPEAKER: Christine Hu, IReS, Strasbourg France 

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to be submitted
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Bipolar transistors become interesting devices for low noise front-end when  the requirement of high speed has to be achieved at low power dissipation.  This paper will present a low noise front-end design using bipolar technology . This design could  be used for the MSGC front-end electronics of the CMS tracker to shorten the effective signal length leading to a reduced 
pile-up probability from tracks belonging to different bunch crossings.

We will describe in detail the simulation of the circuit and the measured performance of several prototype circuits. At a power consumption of 1.4 mW/channels a peaking time of 25 ns, a gain of 90 mV/Mip with a non-linearity less than 5% over +/- 6 Mips dynamical range and a low  noise performance in terms of Equivalent Noise Charge ENC of 1000 electrons rms were obtained for a 12 pF detector capacitance.

The radiation hardness of DMILL bipolar transistors has been a crucial issue in the past. The results of an irradiation with a high intensity pion beam will be presented in this paper.
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